Impact Analysis of NBTI/PBTI on SRAM VMIN and Design Techniques for Improved SRAM VMIN
نویسنده
چکیده
Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) are critical circuit reliability issues in highly scaled CMOS technologies. In this paper, we analyze the impacts of NBTI and PBTI on SRAM VMIN, and present a design solution for mitigating the impact of NBTI and PBTI on SRAM VMIN. Two different types of SRAM VMIN (SNM-limited VMIN and time-limited VMIN) are explained. Simulation results show that SNM-limited VMIN is more sensitive to NBTI while time-limited VMIN is more prone to suffer from PBTI effect. The proposed NBTI/PBTI-aware control of wordline pulse width and woldline voltage improves cell stability, and mitigates the VMIN degradation induced by NBTI/PBTI.
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تاریخ انتشار 2013